2SK3878 1 2010-05-06 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV) 2SK3878 Switching Regulator Applications. Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.). Manufacturer P/N: Hot Sell 5PCS 2SK3878 K3878 TO-3P MOS Field effect transistor We also have other IC chips for sale.Please feel free to contact us. You can find other relative products in our store. Payment Information we accept Paypal payment only, you can use credit card through PayPal. K3878: Field Effect Transistor. 2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV) 2SK3878 Switching Regulator Applications. K3878 Datasheet, K3878 PDF, K3878 Data sheet, K3878 manual, K3878 pdf, K3878, datenblatt, Electronics K3878, alldatasheet, free, datasheet, Datasheets, data sheet.
Part number : K3878
Functions : Field Effect Transistor
Package information : TO-3P type
Manufacturer : Toshiba
Image
Switching Regulator Applications
1. Low drain-source ON-resistance: RDS (ON)= 1.0 Ω(typ.)
2. High forward transfer admittance: ⎪Yfs⎪= 7.0 S (typ.)
3. Low leakage current: IDSS= 100 μA (max) (VDS= 720 V)
Como Testar Transistor K3878
4. Enhancement model: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain-source voltage : VDSS = 900 V
2. Drain-gate voltage (RGS = 20 kΩ) : VDGR = 900 V
3. Gate-source voltage : VGSS = ±30 V
4. Drain current DC : ID = 9, Pulse : IDP = 27 A
5. Drain power dissipation (Tc = 25°C) : PD = 150 W
6. Single pulse avalanche energy : EAS = 778 mJ
7. Avalanche current : IAR = 9 A
8. Repetitive avalanche energy : EAR = 15 mJ
2SK3878
Pinout :
Transistor K3878 Equivalent
K3878 Datasheet PDF
Other data sheets within the file : 2SK3878
Transistor Fet K3878
Related articles across the web
Comments are closed.